Bulk-fin field-effect transistor-based capacitorless dynamic random-access memory and its immunity to the work-function variation effect

Abstract In this study, we developed a capacitorless dynamic random-access memory (DRAM) (1T-DRAM) device based on junctionless (JL) bulk-fin field-effect transistor structure with excellent reliability and negligible variability against work-function variation (WFV). We investigated the in transfer characteristics performance of cell owing to WFV. particular, investigate WFV effect, analyzed 200 samples using four metal-gate materials—TiN, MoN, TaN WN. Consequently, discovered that affected JL transistor. However, proposed 1T-DRAM demonstrated sensing margin retention time produced minimal effect adoption storing holes fin region. exhibited strong immunity for applications.